ZnO films grown using a novel procedure based on the reactive evaporation method
Identifieur interne : 001253 ( Main/Repository ); précédent : 001252; suivant : 001254ZnO films grown using a novel procedure based on the reactive evaporation method
Auteurs : RBID : Pascal:12-0233681Descripteurs français
- Pascal (Inist)
- Evaporation réactive, Couche mince transparente, In situ, Caractéristique électrique, Propriété électrique, Optimisation, Cellule solaire, Facteur mérite, Facteur transmission, Conductivité électrique, Résistivité, Dispositif photovoltaïque, Diffusion mutuelle, Couche barrière, Taux conversion, Oxyde de zinc, Couche mince, Composé ternaire, Sulfure de cuivre, Sulfure d'indium, ZnO, CuInS2.
English descriptors
- KwdEn :
- Barrier layer, Conversion rate, Copper sulfide, Electrical characteristic, Electrical conductivity, Electrical properties, Figure of merit, In situ, Indium sulfide, Interdiffusion, Optimization, Photovoltaic cell, Reactive evaporation, Resistivity, Solar cell, Ternary compound, Thin film, Transmittance, Transparent thin film, Zinc oxide.
Abstract
A novel procedure based on the reactive evaporation method was developed to deposit highly transparent thin films of i-ZnO and n+-ZnO in-situ. The opto-electrical properties of the ZnO films were optimized for using them as TCO layer in solar cells. The optimization of the preparation parameters was achieved through a figure of merit defined in terms of both, the transmittance and the resistivity. n+-ZnO films with resistivities around 8 × 10-4 Ω cm and i-ZnO films with resistivities around 105 Ω cm and transmittances greater than 80% (in the visible region) were obtained with this method. The applicability of the i-ZnO and n+-ZnO thin films in photovoltaic devices has been demonstrated by using them as interdiffusion barrier and TCO layer in CuInS2 based solar cells. Conversion efficiencies of 9.1% were achieved with CIS based solar cells using ZnO thin films deposited by reactive evaporation.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">ZnO films grown using a novel procedure based on the reactive evaporation method</title><author><name sortKey="Oyola, J S" uniqKey="Oyola J">J. S. Oyola</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá DC</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogotá DC</wicri:noRegion></affiliation></author><author><name sortKey="Castro, J M" uniqKey="Castro J">J. M. Castro</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá DC</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogotá DC</wicri:noRegion></affiliation></author><author><name sortKey="Gordillo, G" uniqKey="Gordillo G">G. Gordillo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá DC</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Colombie</country><wicri:noRegion>Bogotá DC</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0233681</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0233681 INIST</idno><idno type="RBID">Pascal:12-0233681</idno><idno type="wicri:Area/Main/Corpus">001D21</idno><idno type="wicri:Area/Main/Repository">001253</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier layer</term><term>Conversion rate</term><term>Copper sulfide</term><term>Electrical characteristic</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Figure of merit</term><term>In situ</term><term>Indium sulfide</term><term>Interdiffusion</term><term>Optimization</term><term>Photovoltaic cell</term><term>Reactive evaporation</term><term>Resistivity</term><term>Solar cell</term><term>Ternary compound</term><term>Thin film</term><term>Transmittance</term><term>Transparent thin film</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaporation réactive</term><term>Couche mince transparente</term><term>In situ</term><term>Caractéristique électrique</term><term>Propriété électrique</term><term>Optimisation</term><term>Cellule solaire</term><term>Facteur mérite</term><term>Facteur transmission</term><term>Conductivité électrique</term><term>Résistivité</term><term>Dispositif photovoltaïque</term><term>Diffusion mutuelle</term><term>Couche barrière</term><term>Taux conversion</term><term>Oxyde de zinc</term><term>Couche mince</term><term>Composé ternaire</term><term>Sulfure de cuivre</term><term>Sulfure d'indium</term><term>ZnO</term><term>CuInS2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A novel procedure based on the reactive evaporation method was developed to deposit highly transparent thin films of i-ZnO and n<sup>+</sup>-ZnO in-situ. The opto-electrical properties of the ZnO films were optimized for using them as TCO layer in solar cells. The optimization of the preparation parameters was achieved through a figure of merit defined in terms of both, the transmittance and the resistivity. n<sup>+</sup>-ZnO films with resistivities around 8 × 10<sup>-4</sup> Ω cm and i-ZnO films with resistivities around 10<sup>5</sup> Ω cm and transmittances greater than 80% (in the visible region) were obtained with this method. The applicability of the i-ZnO and n<sup>+</sup>-ZnO thin films in photovoltaic devices has been demonstrated by using them as interdiffusion barrier and TCO layer in CuInS<sub>2</sub> based solar cells. Conversion efficiencies of 9.1% were achieved with CIS based solar cells using ZnO thin films deposited by reactive evaporation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>102</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>ZnO films grown using a novel procedure based on the reactive evaporation method</s1></fA08><fA11 i1="01" i2="1"><s1>OYOLA (J. S.)</s1></fA11><fA11 i1="02" i2="1"><s1>CASTRO (J. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>GORDILLO (G.)</s1></fA11><fA14 i1="01"><s1>Departamento de Física, Universidad Nacional de Colombia</s1><s2>Bogotá DC</s2><s3>COL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>137-141</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000507919390210</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>14 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0233681</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>A novel procedure based on the reactive evaporation method was developed to deposit highly transparent thin films of i-ZnO and n<sup>+</sup>-ZnO in-situ. The opto-electrical properties of the ZnO films were optimized for using them as TCO layer in solar cells. The optimization of the preparation parameters was achieved through a figure of merit defined in terms of both, the transmittance and the resistivity. n<sup>+</sup>-ZnO films with resistivities around 8 × 10<sup>-4</sup> Ω cm and i-ZnO films with resistivities around 10<sup>5</sup> Ω cm and transmittances greater than 80% (in the visible region) were obtained with this method. The applicability of the i-ZnO and n<sup>+</sup>-ZnO thin films in photovoltaic devices has been demonstrated by using them as interdiffusion barrier and TCO layer in CuInS<sub>2</sub> based solar cells. 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